Hi Jeff, all,
The diode data were provided by me.
They come from production data, so they consider the spread among different lots of production.
I also derived the linearized model, which is not coming from a measurement, but the linearization of the worst case operating points at 0.5A
This is the relevant slide of beia_1_0514.pdf.
Please let me know if you have any question
Best regards
Christian
From: Jeff Heath [mailto:jheath@xxxxxxxxxx]
Sent: Wednesday, July 02, 2014 1:05 AM
To: STDS-802-3-4PPOE@xxxxxxxxxxxxxxxxx
Subject: Re: [802.3_4PPOE] Diode mismatch values
Sorry for my typo. My lab data showed only a 0.030V Vt mismatch, not a 0.30V mismatch…
Regards,
Jeff Heath |
|
paper: | 402 East Carrillo Street, Suite D |
Santa Barbara, California 93101 | |
voice: | 805.965.6400 |
fax: | 805.965.1701 |
computer: | |
From: Jeff Heath [mailto:jheath@xxxxxxxxxx]
Sent: Tuesday, July 01, 2014 4:00 PM
To: 'STDS-802-3-4PPOE@xxxxxxxxxxxxxxxxx'
Subject: Diode mismatch values
Yair,
The diode mismatch parameters I your presentation show a wide variation of threshold (.39V vs .53V) and a zero difference in resistance (0.25 ohms vs 0.25 ohms).
I have included my previous lab data on just six diodes which shows just the opposite: a threshold that is very close (Varying by only 0.30V) and a resistance that is wide (0.28 ohms vs 0.40 ohms).
Given that in the short channel case, the threshold offset is the major contributor to offset currents, I think we should change the values for the diode mismatch.
Regards,
Jeff Heath |
|
paper: | 402 East Carrillo Street, Suite D |
Santa Barbara, California 93101 | |
voice: | 805.965.6400 |
fax: | 805.965.1701 |
computer: | |