Thread Links | Date Links | ||||
---|---|---|---|---|---|
Thread Prev | Thread Next | Thread Index | Date Prev | Date Next | Date Index |
Matt I looked at reference on page 8 Yagisawa-san's paper title "Compact 40-Gbit/s Electroabsorption Monolithically Integrated DFB Laser (EML) Module with a Driver IC for Very Short Reach Application". The EML driver IC is not described in this paper, but to drive an EML I expect the driver IC to be either in InP or SiGe. Based on this driver data how did you arrive at the following statement on page 11 "40 Gb/s Driver Output Waveform In 65 nm Standard CMOS"? You are using InP or SiGe driver performance as proof that 40Gb/s is possible in 65 nm CMOS! Thanks, Ali Matt Traverso wrote:
|
begin:vcard fn:Ali Ghiasi n:Ghiasi;Ali org:Broadcom Corp. adr;dom:;;3151 Zanker Road;San Jose;CA;95134 email;internet:aghiasi@xxxxxxxxxxxx title:Chief Architect tel;work:(408)922-7423 tel;cell:(949)-290-8103 version:2.1 end:vcard