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Ali; I have
interest to understand this as well. I feel the laser driver doesnot have to be
CMOS such as in 10G for better performance. I think
what in Matt’s slides actually talking about the high-speed driver portion
of the CDR, which indicated in its Ref.1 of pg.11 by Toifl. Here is what I can
find from google search for this Ref. ISSCC2007 12.3 A 72mW 0.03mm2 Inductorless 40Gb/s CDR in 65nm SOI CMOS 9:30 AM T. Toifl, C. Menolfi, P. Buchmann, C. Hagleitner, M. Kossel,
T. Morf, J. Weiss, M. Schmatz IBM,
A
quarter-rate CDR circuit is based on a dual-loop approach where sampling phases
are generated
by a phase-programmable PLL that is controlled by a digital DLL. Implemented
in 65nm SOI CMOS, the chip occupies 0.03mm2 and consumes 1.8mW/Gb/s.
Measurements confirm 40Gb/s operation with a BER <10-12 at a maximum frequency-offset
of 400ppm. The phase relation between data and edge samples can be programmed
within ±0.1UI. From: Ali Ghiasi [mailto:aghiasi@xxxxxxxxxxxx] Matt Ali, The reference for page 11 is the same as the reference
on page 8 -- Yagisawa-san's paper. My apologies that this was not clearer
in the presentation. --matt On Wed, Sep 3, 2008 at 3:14 PM, Ali Ghiasi <aghiasi@xxxxxxxxxxxx>
wrote: Mat |